Asyntis 2.2 System | PVATePla America, Inc.
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ASYNTIS 2.2

Technical Features:

High throughput: up to 40 w/h @ 12”
 (3 µm removal incl. Passivation)

Versatile Substrates:  6”, 8”, 12” and 8”,
12”-Framed Wafers

High Uniformity
<= 7% @ 8”;  <= 10% @ 12”

Related Applications:

  • Stress Relief
  • Wafer Thinning
  • Passivation

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    Asyntis 2.2 Fully Automated Remote Plasma System

    Applications:

  • Stress Relief (Wafer Backside and Chip Side)

  • Wafer Thinning

  • Passivation (Oxide, Nitride, mix)

  • Micro-Roughening (soft-rough to porous silicon)

  • Advanced Remote Plasma Applications:
        3M – TAIKO - Dicing - Wafer Thinning


    To Request a Brochure/Literature/Product CD, Click Here

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